Advanced testing helps bring next-generation memory technologies closer to manufacturing
At NY CREATES, technology from Hprobe, Mycronic’s Magnetic Test business line within the Global Technologies division, is supporting more accurate and repeatable characterization of advanced magnetoresistive random access memory (MRAM) devices across research and process development.
Testing as an enabler of innovation
Developing a new semiconductor technology requires more than a promising device concept. Researchers also need reliable ways to test performance, understand behavior and build the data needed for continued development.
NY CREATES is developing STT-MRAM and SOT-MRAM technologies at the device R&D and process development stages. As these technologies evolve, accurate and repeatable magnetic testing is essential, particularly when researchers need to study how devices respond to magnetic fields in different directions.
A combined magnetic and electrical test environment
To strengthen these capabilities, NY CREATES deployed Hprobe's IBEX wafer-level test platform. Hprobe is part of the Magnetic Test business line from Mycronic's Global Technologies division and develops automated test solutions for magnetic devices such as MRAM and sensors.
The IBEX platform combines precise 3D magnetic field control, high-speed electrical testing and wafer-level automation in one environment. This allows magnetic and electrical characterization to be performed together, while supporting consistent measurements across a wafer.
For NY CREATES, this has enabled more complete characterization of SOT-MRAM devices and improved confidence and repeatability in the characterization process. The platform also supports controlled magnetic-field sweeps while monitoring device resistance, providing insight into switching behavior and data retention.
“Hprobe’s IBEX system has enabled us to significantly improve the confidence and repeatability of our characterization, while making it possible to fully evaluate SOT-MRAM devices for the first time.”
Frank Tolic, Associate Vice President for Business Development, NY CREATES
From device research toward future manufacturing
Advanced testing plays an important role in developing emerging technologies. With combined magnetic and electrical characterization at wafer level, NY CREATES can support both device R&D and process development activities.
The project demonstrates how integrated magnetic and electrical testing can provide the control and repeatability required for next-generation memory technologies.
Preparing for more advanced test requirements
As MRAM technologies continue to develop, testing requirements are expanding. The ability to control magnetic field strength and angle in three dimensions supports advanced applications such as magnetic immunity testing and angle-resolved measurements. The system’s RF modules can also support ReRAM testing, extending its relevance within the wider memory-technology ecosystem.
Through Hprobe, Mycronic contributes specialized magnetic test technology designed to support development from R&D to production. The work with NY CREATES demonstrates how precise testing and automation can support the next generation of memory technologies.
Read the full success story of NY CREATES and Hprobe Mycronic here: Enabling Advanced MRAM Testing at NY CREATES with Hprobe’s IBEX Platform